IRF6709S2TRPBF International Rectifier, IRF6709S2TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF6709S2TRPBF
• Description: MOSFET N-CH 25V 12A DIRECTFET-S1
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6709S2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 21 W
• Gate Charge Qg: 8.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
10000
1000
1000
0.01
100
100
100
0.1
0.1
10
10
Fig 6. Typical Transfer Characteristics
1
1
0.1
Fig 4. Typical Output Characteristics
1
1
V DS = 15V
≤ 60µs PULSE WIDTH
T J = 175°C
T J = 25°C
T J = -40°C
2.5V
C oss
C iss
C rss
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
1
f = 1 MHZ
10
≤ 60µs PULSE WIDTH
Tj = 25°C
3
10
TOP
BOTTOM
4
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
5
Fig 7. Normalized On-Resistance vs. Temperature
100
2.0
1.5
1.0
0.5
30
25
20
15
10
10
1
5
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance vs.
I D = 12A
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Drain Current and Gate Voltage
10 20 30 40 50 60 70 80 90 100
2.5V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
I D , Drain Current (A)
1
V GS = 10V
V GS = 4.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
T J = 25°C
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VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100