IRF6709S2TRPBF International Rectifier, IRF6709S2TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6709S2TRPBF
• Description: MOSFET N-CH 25V 12A DIRECTFET-S1
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6709S2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 21 W
• Gate Charge Qg: 8.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 14. Typ. Forward Transconductance vs. Drain Current
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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100
40
35
30
25
20
15
10
10
60
50
40
30
20
10
5
0
1
0
0
25
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
T J = 175°C
T J = 25°C
T J = -40°C
5
50
V SD , Source-to-Drain Voltage (V)
I D ,Drain-to-Source Current (A)
T C , Case Temperature (°C)
10
75
15
V DS = 4.5V
T J = 175°C
T J = 25°C
20
380µs PULSE WIDTH
100
25
125
30
V GS = 0V
35
150
40
175
45
Fig 15. Maximum Avalanche Energy vs. Drain Current
Fig 13. Typical Threshold Voltage vs. Junction
1000
0.01
100
220
200
180
160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
80
60
40
20
10
1
0
Fig 11. Maximum Safe Operating Area
0.01
-75 -50 -25 0
25
T A = 25°C
T J = 175°C
Single Pulse
I D = 25µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
0.10
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
DC
75
25 50 75 100 125 150 175 200
10msec
1.00
100
TOP
BOTTOM 2.0A
125
100µsec
1msec
10.00
150
I D
10A
4.3A
100.00
175
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