IRF7425TRPBF International Rectifier, IRF7425TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7425TRPBF
• Description: MOSFET P-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7425TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 15A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8.2 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 87 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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15
12
0.01
9
6
3
0
100
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
25
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
R
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
V
t
V
d(on)
GS
GS
V
1
J
DS
t
r
µs
DM
x Z
1
thJA
D.U.T.
P
2
DM
IRF7425
+ T
10
R
t
A
d(off)
D
t
1
t
2
t
f
-
+
V
DD
100
5