IRF7425TRPBF International Rectifier, IRF7425TRPBF Datasheet
IRF7425TRPBF
Specifications of IRF7425TRPBF
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IRF7425TRPBF Summary of contents
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... Available in Tape & Reel Description ® These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. ...
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IRF7425 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V 100 -1.5V -1.2V BOTTOM -1. 0.1 -1.0V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...
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IRF7425 12000 1MHz iss rss gd 10000 oss iss 8000 6000 4000 C oss 2000 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 (THERMAL ...
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IRF7425 0.015 0.010 0.005 1.0 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.010 0.009 0.008 ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature www.irf.com 120 100 -250µ 100 125 ...
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IRF7425 SO-8 Package Details 0.25 [.010 0.25 [.010 NOTES: 1. DIMENSIONING & TOLERANCING PER ASME ...
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Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : ...