IRF7425TRPBF International Rectifier, IRF7425TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7425TRPBF
• Description: MOSFET P-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7425TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 15A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8.2 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 87 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7425
SO-8 Package Details
SO-8 Part Marking
8
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
E
A
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
A SUBSTRATE.
6
6X
0.25 [.010]
8
e
1
7
2
8X b
D
6
3
C A B
5
5
4
e1
A1
B
0.25 [.010]
A
H
C
0.10 [.004]
A
y
3X 1.27 [.050]
8X L
6.46 [.255]
7
DIM
K x 45°
e 1
A
A1
b
c
D
E
e
H
K
L
y
.0532
.0040
.013
.0075
.189
.1497
.050 BASIC
.025 BASIC
.2284
.0099
.016
MIN
0°
INCHES
8X c
FOOTPRINT
.0688
.0098
.020
.0098
.1968
.1574
.2440
.0196
.050
MAX
8°
8X 0.72 [.028]
1.35
0.10
0.33
0.19
4.80
3.80
1.27 BASIC
0.635 BASIC
5.80
0.25
0.40
MILLIMETERS
MIN
0°
8X 1.78 [.070]
1.75
0.25
0.51
0.25
5.00
4.00
6.20
0.50
1.27
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MAX
8°