STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet - Page 4

• Manufacturer Part Number: STB45NF06T4
• Description: MOSFET N-CH 60V 38A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB45NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10314-2; STB45NF06T4

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 7.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified).
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
rise time
Turn-off delay time
fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Switching times
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 7433 Rev 5
V
I
V
V
V
V
V
R
(see Figure 13)
V
R
(see Figure 13)
I
V
V
V
V
V
D
D
GS
GS
DS
DS
DD
DD
DD
G
G
DS
DS
GS
DS
GS
=19 A
= 250µA, V
=4.7 Ω, V
=4.7 Ω, V
=0
=30 V, I
=30V, I
= V
= 10V, I
=25V , f=1 MHz,
= 10V
> I
= 48 V, I
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
Test conditions
D(on)
GS
, I
D
D
D
D
x R
=17 A,
D
=17 A,
GS
GS
= 19A
GS
= 250µA
= 34 A
= 10 V
=10 V
DS(on)max,
= 0
Min.
Min.
STB45NF06, STP45NF06
Min.
60
2
-
-
-
0.023 0.028
Typ.
Typ.
14.5
920
225
6.5
Typ.
18
80
32
3
12
50
30
10
Max.
Max.
±
Max.
100
58
10
1
4
Unit
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
S
ns
ns
ns
ns