STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet - Page 8

• Manufacturer Part Number: STB45NF06T4
• Description: MOSFET N-CH 60V 38A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB45NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10314-2; STB45NF06T4

Test circuits
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Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Doc ID 7433 Rev 5
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
Figure 18. Switching time waveform
circuit
STB45NF06, STP45NF06