IRFH5303TR2PBF International Rectifier, IRFH5303TR2PBF Datasheet - Page 3
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IRFH5303TR2PBF
Manufacturer Part Number
IRFH5303TR2PBF
Description
MOSFET N-CH 30V 82A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5303TRPBF.pdf
(8 pages)
Specifications of IRFH5303TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
2190pF @ 15V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.6mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
QFN
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
82 A
Power Dissipation
46 W
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5303TR2PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5303TR2PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
10000
1000
1000
1000
100
100
0.1
100
10
0.1
Fig 3. Typical Transfer Characteristics
10
1
1
Fig 1. Typical Output Characteristics
0.1
2.0
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3.0
T J = 25°C
1
2.8V
Ciss
Coss
4.0
Crss
V DS = 15V
≤ 60μs PULSE WIDTH
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
5.0
10
TOP
BOTTOM
6.0
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
100
7.0
100
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance Vs. Temperature
2.0
1.5
1.0
0.5
1000
100
10
14
12
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20
8
6
4
2
0
0.1
0
I D = 49A
V GS = 10V
I D = 49A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
10
Q G Total Gate Charge (nC)
0
V DS = 24V
V DS = 15V
V DS = 6.0V
1
20
20
2.8V
40
≤ 60μs PULSE WIDTH
Tj = 150°C
30
60
80 100 120 140 160
10
40
TOP
BOTTOM
50
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
3
100
60