IRFH5303TR2PBF International Rectifier, IRFH5303TR2PBF Datasheet - Page 5
![MOSFET N-CH 30V 82A 5X6 PQFN](/photos/13/92/139248/irfh5250tr2pbf_sml.jpg)
IRFH5303TR2PBF
Manufacturer Part Number
IRFH5303TR2PBF
Description
MOSFET N-CH 30V 82A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5303TRPBF.pdf
(8 pages)
Specifications of IRFH5303TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
2190pF @ 15V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.6mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
QFN
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
82 A
Power Dissipation
46 W
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5303TR2PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5303TR2PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
20
16
12
8
4
0
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
2
Fig 15a. Switching Time Test Circuit
4
V GS , Gate-to-Source Voltage (V)
R G
20V
V DS
6
t p
8
≤ 0.1
≤ 1
I AS
10
D.U.T
0.01 Ω
L
12
14
T J = 125°C
T J = 25°C
16
I D = 49A
15V
DRIVER
18
+
-
+
-
20
V DD
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
90%
V
10%
V
I
DS
AS
GS
200
160
120
Fig 15b. Switching Time Waveforms
80
40
0
25
t
d(on)
Starting T J , Junction Temperature (°C)
t
50
t p
r
75
t
d(off)
V
(BR)DSS
TOP
BOTTOM
100
t
f
14A
6.7A
125
49A
I D
5
150