IRFH5303TR2PBF International Rectifier, IRFH5303TR2PBF Datasheet - Page 4
![MOSFET N-CH 30V 82A 5X6 PQFN](/photos/13/92/139248/irfh5250tr2pbf_sml.jpg)
IRFH5303TR2PBF
Manufacturer Part Number
IRFH5303TR2PBF
Description
MOSFET N-CH 30V 82A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH5303TRPBF.pdf
(8 pages)
Specifications of IRFH5303TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
2190pF @ 15V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.6mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
QFN
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
82 A
Power Dissipation
46 W
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5303TR2PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5303TR2PBF
Manufacturer:
IR
Quantity:
20 000
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000.0
100
100.0
80
60
40
20
10.0
0
1.0
0.1
25
0.2
Fig 9. Maximum Drain Current Vs.
0.001
T J = 150°C
Case (Bottom) Temperature
0.01
0.1
0.4
10
V SD , Source-to-Drain Voltage (V)
50
1
1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T C , CaseTemperature (°C)
0.6
D = 0.50
75
0.20
T J = 25°C
0.10
0.05
0.02
0.01
0.8
SINGLE PULSE
( THERMAL RESPONSE )
1.0
100
1E-005
1.2
V GS = 0V
125
1.4
1.6
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
10000
1000
Fig 10. Threshold Voltage Vs. Temperature
0.001
100
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
1
0.1
-75
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
I D = 1.0mA
I D = 250μA
I D = 50μA
-50
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
-25
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J , Temperature ( °C )
1
0
0.01
25
10msec
50
1msec
10
75
www.irf.com
100μsec
100
0.1
125
100
150