IRFZ46ZSPBF International Rectifier, IRFZ46ZSPBF Datasheet

IRFZ46ZSPBF

Manufacturer Part Number

IRFZ46ZSPBF

Description

MOSFET N-CH 55V 51A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFZ46ZLPBF.pdf (12 pages)

2.IRFZ46ZSPBF.pdf (4 pages)

Specifications of IRFZ46ZSPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

13.6 mOhm @ 31A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

51A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

46nC @ 10V

Input Capacitance (ciss) @ Vds

1460pF @ 25V

Power - Max

82W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

51 A

Gate Charge, Total

31 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

82 W

Resistance, Drain To Source On

10.9 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

37 ns

Time, Turn-on Delay

13 ns

Transconductance, Forward

45 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

13.6 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

51 A

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

39 ns

Gate Charge Qg

31 nC

Minimum Operating Temperature

- 55 C

Rise Time

63 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFZ46ZSPBF

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Description

This HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

HEXFET

Features

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

IRFZ46ZPbF

TO-220AB

HEXFET

300 (1.6mm from case )

See Fig.12a,12b,15,16

Typ.

0.50

–––

10 lbf•in (1.1N•m)

IRFZ46ZSPbF

-55 to + 175

IRFZ46ZSPbF

IRFZ46ZLPbF

Max.

0.54

200

± 20

IRFZ46ZPbF

Pak

DS(on)

Power MOSFET

Max.

1.84

–––

DSS

= 51A

IRFZ46ZLPbF

PD - 95562A

= 13.6m

= 55V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRFZ46ZSPBF

IRFZ46ZSPBF Summary of contents

Page 1

... Parameter 95562A IRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF ® HEXFET Power MOSFET 55V DSS R = 13.6m DS(on 51A Pak TO-262 IRFZ46ZSPbF IRFZ46ZLPbF Max. Units 200 82 W 0.54 W/°C ± See Fig.12a,12b,15, - 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. Max. Units – ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 70 TOP Single Pulse BOTTOM 1% Duty Cycle 31A ...

Page 8

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead - Free" Notes: 1. For an ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASSE MBLE 02, 2000 IN THE ASSE MBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 SEMBLY LINE "C" OR Notes: 1. For an ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

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