IRFZ46ZSPBF International Rectifier, IRFZ46ZSPBF Datasheet

MOSFET N-CH 55V 51A D2PAK

IRFZ46ZSPBF

Manufacturer Part Number
IRFZ46ZSPBF
Description
MOSFET N-CH 55V 51A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFZ46ZSPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13.6 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1460pF @ 25V
Power - Max
82W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
51 A
Gate Charge, Total
31 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
82 W
Resistance, Drain To Source On
10.9 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
37 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
45 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13.6 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
51 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
39 ns
Gate Charge Qg
31 nC
Minimum Operating Temperature
- 55 C
Rise Time
63 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ46ZSPBF
Features
Description
Specifically designed for Automotive applica-
tions, this HEXFET
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
HEXFET
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(tested)
C
C
C
= 25°C
= 100°C
= 25°C
®
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
®
Power MOSFET utilizes the
AUTOMOTIVE MOSFET
Parameter
Parameter
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
TO-220AB
i
G
IRFZ46Z
j
d
HEXFET
300 (1.6mm from case )
See Fig.12a,12b,15,16
Typ.
S
D
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
IRFZ46ZS
-55 to + 175
IRFZ46ZSPbF
IRFZ46ZLPbF
D
Max.
2
0.54
200
± 20
IRFZ46ZPbF
Pak
51
36
82
63
97
®
R
DS(on)
Power MOSFET
V
Max.
1.84
–––
62
40
DSS
I
D
= 51A
= 13.6mΩ
PD - 95562
= 55V
IRFZ46ZL
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFZ46ZSPBF Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount, steady state) θJA ® HEXFET is a registered trademark of International Rectifier. AUTOMOTIVE MOSFET G TO-220AB IRFZ46Z Parameter @ 10V (Silicon Limited 10V (See Fig Parameter 95562 IRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF ® HEXFET Power MOSFET 55V DSS R = 13.6mΩ DS(on 51A Pak TO-262 IRFZ46ZS IRFZ46ZL Max ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...

Page 3

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 EMB LY LINE "L" Note: "P" in assembly line ...

Page 4

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

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