STB4NK60Z-1 STMicroelectronics, STB4NK60Z-1 Datasheet - Page 13

• Manufacturer Part Number: STB4NK60Z-1
• Description: MOSFET N-CH 600V 4A I2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB4NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Dim
A1
b1
e1
L1
L2
c2
A
D
E
b
e
L
c
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
Package mechanical data
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max
13/20