STB4NK60Z-1 STMicroelectronics, STB4NK60Z-1 Datasheet - Page 9
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STB4NK60Z-1
Manufacturer Part Number
STB4NK60Z-1
Description
MOSFET N-CH 600V 4A I2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB4NK60ZT4.pdf
(20 pages)
Specifications of STB4NK60Z-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB4NK60Z-1
Manufacturer:
ST
Quantity:
12 500
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 18. Gate charge test circuit
Figure 20. Unclamped Inductive load test
Figure 22. Switching time waveform
circuit
Test circuits
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