STB4NK60Z-1 STMicroelectronics, STB4NK60Z-1 Datasheet - Page 4

• Manufacturer Part Number: STB4NK60Z-1
• Description: MOSFET N-CH 600V 4A I2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB4NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/20
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
t
t
t
I
I
increases from 0 to 80% V
DS(on)
C
r(Voff)
GS(th)
C
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss eq.
t
oss
t
t
t
iss
rss
c
gs
gd
r
f
r
g
(1)
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
I
V
V
V
V
V
D
GS
GS
DS
DS
DS
V
V
V
V
V
R
(see
V
R
(see
V
V
(see
=1 mA, V
GS
GS
DS
DS
DS
DD
G
DD
G
DD
= Max rating
= Max rating, T
= V
= ± 20 V
= 10 V, I
= 4.7 Ω, V
= 4.7 Ω, V
= 15 V, I
= 25 V, f = 1 MHz,
= 0
=0, V
= 10 V
= 300 V, I
= 480 V, I
= 480 V, I
Test conditions
Figure
Figure
Figure
GS
Test conditions
, I
GS
DS
D
D
= 50 µA
17)
19)
18)
= 2 A
= 0
D
= 0 to 480 V
D
GS
D
GS
D
= 2 A
= 2 A,
= 4 A,
= 4 A,
C
= 10 V
= 10 V
= 125 °C
Min.
Min.
600
3
Typ.
38.5
16.5
19.5
18.8
510
9.5
3.8
9.8
Typ. Max. Unit
3.75
1.76
67
13
12
29
12
12
3
oss
Max.
when V
± 10
26
4.5
50
1
2
DS
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
S
V
V
Ω