IRF7210PBF International Rectifier, IRF7210PBF Datasheet

MOSFET P-CH 12V 16A 8-SOIC

IRF7210PBF

Manufacturer Part Number
IRF7210PBF
Description
MOSFET P-CH 12V 16A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7210PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 16A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
600mV @ 500µA
Gate Charge (qg) @ Vgs
212nC @ 5V
Input Capacitance (ciss) @ Vds
17179pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.007Ohm
Drain-source On-volt
12V
Gate-source Voltage (max)
±12V
Continuous Drain Current
16A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
12 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
30 ns
Gate Charge Qg
212 nC
Minimum Operating Temperature
- 55 C
Rise Time
3 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
www.irf.com
V
I
I
I
P
P
V
V
T
R
D
D
DM
J,
DS
D
D
GS
GSM
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
Top View
HEXFET Power MOSFET
8
7
6
5
IRF7210PbF
-55 to + 150
Max.
Max.
±100
0.02
D
D
±16
±12
± 12
50
D
D
-12
2.5
1.6
A
16
R
DS(on)
V
DSS
= 0.007Ω
= -12V
Units
Units
08/19/05
W/°C
°C/W
°C
V
A
V
V
1

Related parts for IRF7210PBF

IRF7210PBF Summary of contents

Page 1

... Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage GS V Gate-to-Source Voltage Single Pulse tp<10µs GSM T T Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7210PbF HEXFET Power MOSFET Top View Max. @ -4. -4.5V GS ±100 0.02 - 150 Max ...

Page 2

... IRF7210PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... BOTTOM -0. -0. Fig 2. Typical Output Characteristics 2.0 -16A 1.5 1 150°C J 0.5 0.0 A -60 -40 -20 6.0 8.0 Fig 4. Normalized On-Resistance IRF7210PbF VGS 300µs PULSE WIDTH -1. 150°C -1.6V J -1.4V -1.2V -1.0V -0. Drain-to-Source Voltage ( -4. 100 120 140 160 ° Junction Temperature ( ...

Page 4

... IRF7210PbF 24000 1MHz iss rss oss ds gd 20000 C iss 16000 12000 C oss C rss 8000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 25°C J 100 10 1 0.0 2.0 4.0 6 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 ...

Page 5

... D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 0.01 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7210PbF thJA A 10 100 5 ...

Page 6

... IRF7210PbF SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...

Page 7

... This product has been designed and qualified for the Consumer market. www.irf.com FEED DIRECTION 330.00 (12.992) MAX. Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. IRF7210PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) 7 ...

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