IRF7210PBF International Rectifier, IRF7210PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7210PBF
• Description: MOSFET P-CH 12V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7210PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 600mV @ 500µA
• Gate Charge (qg) @ Vgs: 212nC @ 5V
• Input Capacitance (ciss) @ Vds: 17179pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 16A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 30 ns
• Gate Charge Qg: 212 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
1
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(THERMAL RESPONSE)
0.01
SINGLE PULSE
t , Rectangular Pulse Duration (sec)
1
0.1
1
1. Duty factor D = t / t
2. Peak T = P
Notes:
J
IRF7210PbF
DM
x Z
1
10
thJA
P
2
DM
+ T
A
t
1
t
2
100
5