STD95N4LF3 STMicroelectronics, STD95N4LF3 Datasheet - Page 4

• Manufacturer Part Number: STD95N4LF3
• Description: MOSFET N-CH 40V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD95N4LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 11 ns
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8776-2

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
= 25 °C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15372 Rev 2
V
V
V
V
R
(see
Figure
V
V
Figure
I
V
V
V
V
V
V
D
GS
GS
DS
DS
GS
DS
GS
GS
DS
DS
DD
DD
G
= 250 µA, V
= 4.7 Ω V
= max rating
= max rating @125 °C
= V
Test conditions
= 25 V, I
= 25 V, f = 1 MHz,
= 0
= 20 V, I
= 20 V, I
= 10 V (see
= ± 16 V
= 10 V, I
= 5 V, I
Figure 13
Test conditions
18)
14)
GS
, I
D
D
D
D
D
D
GS
= 40 A
GS
= 250 µA
= 40 A
= 40 A
= 40 A
= 80 A,
and
= 10 V
=0
Min.
-
-
-
-
Min.
40
1
2500
Typ.
150
560
7.5
9.5
50
45
45
11
50
Typ.
7
5.0
Max.
STD95N4LF3
Max.
±200
70
100
2.5
6.0
9.0
10
Unit
Unit
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V