STD95N4LF3 STMicroelectronics, STD95N4LF3 Datasheet - Page 6

• Manufacturer Part Number: STD95N4LF3
• Description: MOSFET N-CH 40V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD95N4LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 11 ns
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8776-2

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
R
I
D
1
DS(on)
(mΩ)
300
250
200
150
100
0.1
(A)
I
50
D
6.2
6.0
5.6
5.0
6.6
6.4
5.8
5.4
5.2
0
0
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Static drain-source on resistance
1
10
V
GS
2
20
=10V
1
3
30
V
GS
4
=5V
40
5
50
10
6
60 70 80
7
8
V
4V
DS
9
(V)
I
3V
D
Doc ID 15372 Rev 2
T
T
Single
pulse
10ms
(A)
100µs
1ms
AM01528v1
J
AM01529v1
AM01532v1
C
=175°C
V
=25°C
DS
(V)
Figure 3.
Figure 5.
Figure 7.
(norm)
BV
DSS
1.0
0.9
1.1
0.8
250
200
150
100
300
(A)
I
50
D
0
0
-50
Thermal impedance
Transfer characteristics
Normalized B
2
0
4
50
VDSS
6
100
vs temperature
V
DS
STD95N4LF3
8
=10V
150
V
GS
AM01531v1
(V)
AM01530v1
T
J
(°C)