STD95N4LF3 STMicroelectronics, STD95N4LF3 Datasheet - Page 5

• Manufacturer Part Number: STD95N4LF3
• Description: MOSFET N-CH 40V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD95N4LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 11 ns
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8776-2

STD95N4LF3
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 15372 Rev 2
I
I
V
(see
Figure
SD
SD
DD
= 80 A, V
= 80 A, di/dt = 100 A/µs,
= 20 V, T
Figure 15
Test conditions
19)
GS
j
= 150 °C
and
= 0
Electrical characteristics
Min.
-
-
-
Typ.
40
55
3
Max.
320
1.5
80
Unit
nC
ns
A
A
V
A
5/16