IRF7494TRPBF International Rectifier, IRF7494TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7494TRPBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 3W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 36 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7494
V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
AS
SD
g
gs
gd
rr
2
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ù
Parameter
Parameter
Parameter
Ù
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
150
–––
–––
–––
–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.5
12
1750
0.15
–––
–––
–––
–––
–––
–––
–––
220
100
870
120
170
–––
–––
–––
140
7.5
35
36
13
15
13
36
14
55
Typ.
-100
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
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–––
–––
–––
–––
4.0
2.7
1.3
44
10
54
42
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 3.1A
= 3.1A
= 25°C, I
= 25°C, I
= 6.5Ω
= 0V, I
= 10V, I
= V
= 120V, V
= 120V, V
= 20V
= -20V
= 50V, I
= 75V
= 10V
= 75V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
370
, I
3.1
f
f
D
Conditions
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
= 250µA
= 3.1A, V
= 3.1A, V
= 3.1A
= 5.2A
GS
GS
= 0V to 120V
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
f
= 0V
= 0V, T
www.irf.com
D
f
= 1mA
DD
GS
G
J
= 25V
= 125°C
= 0V
Units
g
mJ
A
f
D
S