IRF7494TRPBF International Rectifier, IRF7494TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7494TRPBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 3W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 36 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
1
0.0001
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Ambient Temperature
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t 1 , Rectangular Pulse Duration (sec)
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1
t
r
≤ 0.1 %
≤ 1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
t
IRF7494
d(off)
10
t
f
+
-
100
5