IRF7494TRPBF International Rectifier, IRF7494TRPBF Datasheet

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IRF7494TRPBF

Manufacturer Part Number
IRF7494TRPBF
Description
MOSFET N-CH 150V 5.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7494TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
3W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
54nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
5.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
44 mOhm @ 3.1A, 10V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.2 A
Power Dissipation
3 W
Mounting Style
SMD/SMT
Gate Charge Qg
36 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7494TRPBF
Manufacturer:
IR
Quantity:
20 000
l
Benefits
l
l
l
Applications
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
P
dv/dt
T
T
Thermal Resistance
R
R
Notes  through
D
D
DM
J
STG
DS
GS
D
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 100°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
to Simplify Design, (See
are on page 8
Parameter
Parameter
h
GS
GS
@ 10V
@ 10V
e
V
150V
DSS
G
S
S
S
1
2
3
4
Top View
44m @V
Typ.
–––
–––
R
DS(on)
HEXFET
-55 to + 150
8
7
6
5
Max.
± 20
0.02
150
5.2
3.7
3.0
3.0
42
D
D
D
D
GS
A
A
max
= 10V
®
Max.
IRF7494
20
50
Power MOSFET
SO-8
5.2A
Units
Units
I
°C/W
W/°C
V/ns
03/27/08
D
°C
W
V
A
1

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IRF7494TRPBF Summary of contents

Page 1

Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute ...

Page 2

IRF7494 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRF7494 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3 ...

Page 4

IRF7494 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com ...

Page 5

Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching ...

Page 6

IRF7494 Fig 12. On-Resistance vs. Drain Current VCC DUT 0 1K Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 15a&b. Unclamped Inductive ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 8

IRF7494 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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