IRF6674TRPBF International Rectifier, IRF6674TRPBF Datasheet
IRF6674TRPBF
Specifications of IRF6674TRPBF
Related parts for IRF6674TRPBF
IRF6674TRPBF Summary of contents
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... Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.272mH IRF6674TRPbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 60V max ±20V max 9.0mΩ@ 10V Q Q ...
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... IRF6674TRPbF Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...
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... Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š measured at θ ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) IRF6674TRPbF Max. 3.6 2.3 89 270 - 150 Typ. ...
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... IRF6674TRPbF 100 10 6.0V ≤60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40° 10V ≤60μs PULSE WIDTH 0.1 2.0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 100000 0V MHZ C iss = SHORTED ...
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... TOP 300 BOTTOM 200 100 100 Starting Junction Temperature (°C) IRF6674TRPbF OPERATION IN THIS AREA LIMITED (on) 100μsec 1msec 25°C 10msec Tj = 150°C Single Pulse 0 Drain-toSource Voltage (V) Fig11. Maximum Safe Operating Area 250μ 100μA ...
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... IRF6674TRPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 Id Vgs L VCC Fig 15b. Gate Charge Waveform 15V DRIVER + Fig 16b. Unclamped Inductive Waveforms ...
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... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied Voltage - Inductor Curent *** http://www.irf.com/package IRF6674TRPbF P.W. Period D = Period *** V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ ® Power MOSFETs G=GATE D=DRAIN S=SOURCE 7 ...
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... IRF6674TRPbF DirectFET™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN A 6.25 6.35 0.246 0.250 B 4.80 5.05 0.189 0.201 C 3.85 3.95 0.152 ...
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... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.4/08 IRF6674TRPbF IMPERIAL MIN MAX 6.9 N.C ...