IRF6674TRPBF International Rectifier, IRF6674TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF6674TRPBF
• Description: MOSFET N-CH 60V 13.4A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6674TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 13.4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 13.4A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MZ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 89 W
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DirectFET™ Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Note: For the most current drawing please refer to IR website at
www.irf.com
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D.U.T
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET
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SD
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D
D
-
„
G
+
G
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+
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Re-Applied
Voltage
S
S
Reverse
Recovery
Current
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
http://www.irf.com/package
Waveform
D
D
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
®
Diode Recovery
G=GATE
D=DRAIN
S=SOURCE
Current
Power MOSFETs
dv/dt
Forward Drop
IRF6674TRPbF
di/dt
D =
Period
P.W.
V
V
I
SD
***
GS
DD
=10V
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