IRF6674TRPBF International Rectifier, IRF6674TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6674TRPBF
• Description: MOSFET N-CH 60V 13.4A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6674TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 13.4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 13.4A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MZ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 89 W
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 12. Maximum Drain Current vs. Ambient Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
10
14
12
10
1
0
8
6
4
2
0
0.2
25
0.4
V SD , Source-to-Drain Voltage (V)
50
T J , Ambient Temperature (°C)
0.6
75
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.8
100
1.0
400
300
200
100
T J = 150°C
T J = 25°C
T J = -40°C
0
V GS = 0V
25
1.2
125
Starting T J , Junction Temperature (°C)
50
1.4
150
75
100
TOP
BOTTOM
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
0.1
10
1
-75
Fig11. Maximum Safe Operating Area
125
0.1
I D = 250μA
I D = 100μA
4.5A
Fig 13. Typical Threshold Voltage vs.
9.3A
T C = 25°C
Tj = 150°C
Single Pulse
26.8A
-50
I D
V DS , Drain-toSource Voltage (V)
-25
150
T J , Temperature ( °C )
Junction Temperature
IRF6674TRPbF
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
25
50
10msec
75
10
1msec
100μsec
100 125
100
150
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