STB80NF55-08T4 STMicroelectronics, STB80NF55-08T4 Datasheet

MOSFET N-CH 55V 80A D2PAK

STB80NF55-08T4

Manufacturer Part Number
STB80NF55-08T4
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STB80NF55-08T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
3V
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3737-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF55-08T4
Manufacturer:
ST
Quantity:
3 000
Part Number:
STB80NF55-08T4
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
remarkable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
(
March 2002
.
STB80NF55-08/-1
STP80NF55-08
TYPICAL R
LOW THRESHOLD DRIVE
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
Current limited by package
Symbol
I
E
Pulse width limited by safe operating area.
DM
V
I
V
V
P
AS (1)
T
D
DGR
I
T
GS
stg
DS
(
D
tot
(
critical
j
TYPE
N-CHANNEL 55V - 0.0065
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
alignment
(on) = 0.0065
V
55 V
55 V
DSS
Parameter
steps
<0.008
<0.008
R
DS(on)
C
GS
= 25°C
GS
STB80NF55-08 STB80NF55-08-1
= 20 k )
therefore
= 0)
C
C
= 25°C
= 100°C
80 A
80 A
I
D
a
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) Starting T
- 80A D
TO-263
D
2
PAK
j
1
= 25
3
-55 to 175
o
Value
C, I
± 20
320
300
870
2
55
55
80
57
2
PAK/I
D
STP80NF55-08
= 40A, V
TO-220
DD
2
= 30V
PAK/TO-220
1
2
3
I
2
TO-262
PAK
W/°C
Unit
mJ
°C
W
V
V
V
A
A
A
1 2
1/11
3

Related parts for STB80NF55-08T4

STB80NF55-08T4 Summary of contents

Page 1

... Total Dissipation at T tot Derating Factor AS (1) E Single Pulse Avalanche Energy T Storage Temperature stg T Max. Operating Junction Temperature j ( Current limited by package ( Pulse width limited by safe operating area. March 2002 . STB80NF55-08 STB80NF55-08-1 - 80A D STripFET™ II POWER MOSFET R I DS(on TO-263 therefore a INTERNAL SCHEMATIC DIAGRAM = 25° ...

Page 2

... STB80NF55-08/-1 STP80NF55-08 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter V Gate Threshold Voltage ...

Page 3

... Source-drain Current (pulsed) SD (*) V Forward On Voltage t Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area STB80NF55-08/-1 STP80NF55-08 Test Conditions 4 (Resistive Load, Figure 44V ...

Page 4

... STB80NF55-08/-1 STP80NF55-08 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/11 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . . STB80NF55-08/-1 STP80NF55-08 Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature 5/11 ...

Page 6

... STB80NF55-08/-1 STP80NF55-08 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STB80NF55-08/-1 STP80NF55-08 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.315 0.409 0.334 0.208 0.624 0.055 0.069 0.126 0.016 0° ...

Page 8

... STB80NF55-08/-1 STP80NF55-08 TO-262 (I DIM. MIN. A 4.4 A1 2.49 B 0.7 B2 1.14 C 0.45 C2 1.23 D 8. 13.1 L1 3.48 L2 1.27 L2 8/11 2 PAK) MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.69 0.098 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 2.7 0.094 10.4 0.393 13 ...

Page 9

... F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 Dia STB80NF55-08/-1 STP80NF55-08 mm MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 1.27 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 16.4 14.0 ...

Page 10

... STB80NF55-08/-1 STP80NF55- PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 ...

Page 11

... Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES http://www.st.com STB80NF55-08/-1 STP80NF55-08 11/11 ...

Page 12

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