STB80NF55-08T4 STMicroelectronics, STB80NF55-08T4 Datasheet - Page 8

• Manufacturer Part Number: STB80NF55-08T4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF55-08T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 3V
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3737-2

STB80NF55-08/-1 STP80NF55-08
8/11
DIM.
A1
B2
C2
L1
L2
A
B
C
D
E
e
L
MIN.
2.49
1.14
0.45
1.23
8.95
13.1
3.48
1.27
4.4
0.7
2.4
10
L2
TO-262 (I
TYP.
mm
2
PAK) MECHANICAL DATA
D
MAX.
2.69
0.93
1.36
9.35
10.4
13.6
3.78
4.6
1.7
0.6
2.7
1.4
L1
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MIN.
L
TYP.
inch
P011P5/E
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055