STB80NF55-08T4 STMicroelectronics, STB80NF55-08T4 Datasheet - Page 4

• Manufacturer Part Number: STB80NF55-08T4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF55-08T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 3V
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3737-2

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 7.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 14511 Rev 2
V
V
V
V
V
(see Figure 14)
I
V
V
V
V
V
STB80NF55-08T4, STP80NF55-08, STW80NF55-08
D
GS
GS
V
R
(see Figure 13)
DS
DS
DD
DS
DS
GS
DS
GS
= 250 µA, V
DD
G
= 0
= 27 V, I
= 25 V, f = 1 MHz,
=10 V
=15 V , I
= max rating
= max rating@125 °C
= ±20 V
= V
= 10 V, I
= 4.7 Ω V
Test conditions
Test conditions
= 27 V, I
Test conditions
GS
, I
D
D
D
D
= 80 A
D
GS
GS
= 250 µA
= 18 A
= 40 A
= 40 A
= 10 V
= 0
Min.
Min.
Min.
55
2
0.0065 0.008
3740
Typ.
Typ.
830
265
112
Typ.
40
20
40
110
3
20
75
35
Max.
Max.
±100
Max.
155
10
1
4
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
µA
µA
nA
S
V
V
Ω