IRFB3507PBF International Rectifier, IRFB3507PBF Datasheet

IRFB3507PBF

Manufacturer Part Number

IRFB3507PBF

Description

MOSFET N-CH 75V 97A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFSL3507PBF.pdf (12 pages)

Specifications of IRFB3507PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

8.8 mOhm @ 58A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

97A

Vgs(th) (max) @ Id

4V @ 100µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

3540pF @ 50V

Power - Max

190W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

97 A

Power Dissipation

190 W

Mounting Style

Through Hole

Gate Charge Qg

88 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFB3507PBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB3507PBF

Manufacturer:

Quantity:

32 030

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB3507PBF

Manufacturer:

International Rectifier

Quantity:

135

Company:

H&T Electronics

Part Number:

IRFB3507PBF M

Quantity:

25 780

Current page: 1 of 12
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Applications

Benefits

www.irf.com

dv/dt

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D

Parameter

Ã™

@ 10V

Pak

TO-220AB

IRFB3507

Typ.

See Fig. 14, 15, 16a, 16b

0.50

–––

DSS

DS(on)

10lb

-55 to + 175

IRFS3507

in (1.1N

Max.

HEXFET Power MOSFET

390

190

± 20

300

280

1.3

5.0

™

Pak

typ.

max.

Max.

0.77

–––

IRFSL3507

IRFB3507

IRFS3507

7.0m

8.8m

75V

97A

IRFSL3507

TO-262

Units

W/°C

°C/W

V/ns

°C

01/20/06

Related parts for IRFB3507PBF

IRFB3507PBF Summary of contents

Page 1

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching Hard Switched and High Frequency Circuits l Benefits Improved Gate, Avalanche and Dynamic dV/dt l Ruggedness Fully Characterized Capacitance and Avalanche l SOA ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 4

175° 25°C 1 0.1 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 Limited By Package ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.0001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, ...

Page 6

100µA 2 250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ...

Page 7

D.U.T + ƒ ‚ - • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" sembly line pos ition indicates "Lead - Free" TO-220AB packages are not ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 EMBLY LINE "C" www.irf.com INT ERNATIONAL ...

Page 10

T HIS IS AN IRF530S WITH LOT CODE 8024 ASS EMBLED ON WW 02, 2000 ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE INT ERNAT IONAL RECT ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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