IRFB3507PBF International Rectifier, IRFB3507PBF Datasheet - Page 2

MOSFET N-CH 75V 97A TO-220AB

IRFB3507PBF

Manufacturer Part Number
IRFB3507PBF
Description
MOSFET N-CH 75V 97A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB3507PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.8 mOhm @ 58A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
97A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3540pF @ 50V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
97 A
Power Dissipation
190 W
Mounting Style
Through Hole
Gate Charge Qg
88 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB3507PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB3507PBF
Manufacturer:
IR
Quantity:
32 030
Part Number:
IRFB3507PBF
Manufacturer:
International Rectifier
Quantity:
135
Company:
Part Number:
IRFB3507PBF M
Quantity:
25 780
Notes:

ƒ
Static @ T
V
∆V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
rr
temperature. Package limitation current is 75A.
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
R
Symbol
Symbol
Symbol
(BR)DSS
SD
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
≤ 58A, di/dt ≤ 390A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 58A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.17mH,
DD
Ãd
≤ V
Parameter
Parameter
(BR)DSS
, T
J
≤ 175°C.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.070 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
ˆ
75
86
mended footprint and soldering techniques refer to application note #AN-994.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
oss
θ
oss
3540
–––
–––
–––
–––
–––
–––
–––
340
210
460
520
–––
–––
–––
7.0
1.3
1.7
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
88
24
36
20
81
52
49
37
45
32
51
while V
-200
97
–––
250
200
–––
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
390
–––
DS
8.8
4.0
1.3
20
56
68
48
77
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 58A
= 58A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 5.6Ω
= V
= 75V, V
= 75V, V
= 50V, I
= 60V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 48V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
D
g
g
DSS
S
D
DS
DS
D
D
= 250µA
GS
GS
= 58A, V
= 100µA
= 58A
= 58A
DSS
= 0V to 60V
= 0V to 60V
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
.
V
I
di/dt = 100A/µs
F
R
= 58A
g
D
= 64V,
GS
= 1mA
J
= 125°C
= 0V
i
G
d
, See Fig.11
, See Fig. 5
www.irf.com
g
g
S
D

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