IRFB3507PBF International Rectifier, IRFB3507PBF Datasheet - Page 12

• Manufacturer Part Number: IRFB3507PBF
• Description: MOSFET N-CH 75V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3507PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3540pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 190 W
• Mounting Style: Through Hole
• Gate Charge Qg: 88 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB3507PBF

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/