IXTP12N50P IXYS, IXTP12N50P Datasheet

MOSFET N-CH 500V 12A TO-220

IXTP12N50P

Manufacturer Part Number
IXTP12N50P
Description
MOSFET N-CH 500V 12A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXTP12N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1830pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Forward Transconductance Gfs (max / Min)
13 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
1830
Qg, Typ, (nc)
29
Trr, Typ, (ns)
-
Pd, (w)
200
Rthjc, Max, (k/w)
0.62
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP12N50P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTP12N50P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTP12N50PM
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTP12N50PM
Manufacturer:
IXYS
Quantity:
18 000
Polar
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
TO-263
Leaded TO-263
TO-220
V
V
V
V
V
V
Test Conditions
Power MOSFET
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220)
(TO-263)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
10..65 / 2.2..14.6
IXTA12N50P
IXTI12N50P
IXTP12N50P
Min.
500
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
Characteristic Values
1.13 / 10
500
500
±30
±40
600
200
150
300
260
2.5
2.8
3.0
Typ.
12
30
12
10
±100 nA
Nm/lb.in.
500 mΩ
250 μA
Max.
5.5
5
N/lb.
V/ns
mJ
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
TO-263 (IXTA)
Leaded TO-263 (IXTI)
TO-220 (IXTP)
G = Gate
S = Source
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
easy to drive and to protect
V
I
R
Easy to mount
Space savings
High power density
D25
DS(on)
DSS
G
G
D
S
D
G
= 500V
= 12A
≤ ≤ ≤ ≤ ≤
S
D
TAB = Drain
S
500mΩ Ω Ω Ω Ω
= Drain
DS99322F(04/08)
(TAB)
(TAB)
(TAB)

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IXTP12N50P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA12N50P IXTI12N50P IXTP12N50P Maximum Ratings 500 = 1MΩ 500 GS ±30 ± 600 ≤ 150° 200 -55 ... +150 150 -55 ... +150 300 260 1. 10..65 / 2.2..14.6 2.5 2.8 3.0 Characteristic Values Min ...

Page 2

... B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA12N50P TO-220 (IXTP) Outline Max Pins Gate nC 0.62 °C/W °C/W Max 1.5 V Leaded 263 (IXTI) Outline 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTI12N50P IXTP12N50P 2 - Drain 7,157,338B2 ...

Page 3

... Fig. 2. Extended Output Characteristics º 10V Volts D S Fig Normalized DS(on vs. Junction Temperature 2.6 2 2.2 2.0 1.8 1 12A D 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Curre Case Te mpe rature -50 - Degrees Centigrade C IXTP12N50P Value 100 125 150 100 125 150 ...

Page 4

... C iss C oss C rss Volts IXTA12N50P Fig. 8. Transconductance º º 125 º Amperes D Fig. 10. Gate Charge 250V 10m nanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Lim it DS(on 100 V - Volts D S IXTI12N50P IXTP12N50P 150º 25ºC C 25µs 100µ 10ms 1000 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 1 Pulse Width - milliseconds IXTA12N50P IXTI12N50P IXTP12N50P 10 100 IXYS REF: T_12N50P (4J) 04-14-08-D 1000 ...

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