IXTP12N50P IXYS, IXTP12N50P Datasheet - Page 4

• Manufacturer Part Number: IXTP12N50P
• Description: MOSFET N-CH 500V 12A TO-220
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTP12N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1830pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.5
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 29
• Trr, Typ, (ns): -
• Pd, (w): 200
• Rthjc, Max, (k/w): 0.62
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
20
18
16
14
12
10
35
30
25
20
15
10
10
8
6
4
2
0
5
0
0.4
4.5
0
Fig. 9. Source Current vs. Source-To-Drain
f
= 1 MHz
5
0.5
5.0
Fig. 11. Capacitance
Fig. 7. Input Admittance
10
T
T
J
0.6
5.5
J
= 125 º C
= 125 º C
15
- 40ºC
V
V
V
25ºC
G S
S D
D S
Voltage
- Volts
- Volts
0.7
20
6.0
- Volts
25
C
C
0.8
C
6.5
iss
oss
rss
T
30
J
= 25 º C
0.9
7.0
35
1.0
40
7.5
100
10
27
24
21
18
15
12
10
1
9
6
3
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
V
I
I
= - 40 º C
2
D
G
3
DS
125 º C
= 6A
= 10m A
25 º C
R
Fig. 8. Transconductance
= 250V
DS(on)
4
6
IXTA12N50P
Fig. 10. Gate Charge
Fig. 12. Forward-Bias
Safe Operating Area
Q
6
9
Lim it
G
I
12
V
- nanoCoulombs
D
8
D S
- Amperes
DC
100
10
15
- Volts
12
18
14
21
IXTI12N50P
IXTP12N50P
T
T
J
C
= 150ºC
= 25ºC
16
24
100µs
18
25µs
1m s
27
10ms
1000
20
30