IXTP12N50P IXYS, IXTP12N50P Datasheet - Page 2

MOSFET N-CH 500V 12A TO-220

IXTP12N50P

Manufacturer Part Number
IXTP12N50P
Description
MOSFET N-CH 500V 12A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXTP12N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1830pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Forward Transconductance Gfs (max / Min)
13 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
1830
Qg, Typ, (nc)
29
Trr, Typ, (ns)
-
Pd, (w)
200
Rthjc, Max, (k/w)
0.62
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP12N50P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTP12N50P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTP12N50PM
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTP12N50PM
Manufacturer:
IXYS
Quantity:
18 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
Q
S
SM
RM
d(on)
r
d(off)
f
rr
TO-263 (IXTA) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
RM
= 25°C, unless otherwise specified)
I
V
Test Conditions
V
V
Resistive Switching Times
V
R
V
(TO-220)
Test Conditions
V
Repetitive, pulse width limited by T
I
F
F
R
DS
GS
GS
GS
GS
G
= 6A, -di/dt = 150A/μs,
= I
= 100V, V
= 10V, I
= 10Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
(T
JM
J
D25
D25
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
7.5
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1830
Typ.
0.50
182
18.2
Typ.
16
22
27
65
20
29
11
10
13
2.8
0.62 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
300 ns
1.5
12
48
Max.
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA12N50P
Leaded 263 (IXTI) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
IXTI12N50P
IXTP12N50P
2 - Drain
7,157,338B2

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