STD12NM50N STMicroelectronics, STD12NM50N Datasheet - Page 18

• Manufacturer Part Number: STD12NM50N
• Description: MOSFET N-CH 500V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.7 A to 11 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5784-2; STD12NM50N

Revision history
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Revision history
Table 9.
24-May-2005
28-Sep-2005
06-Mar-2006
29-Mar-2006
14-Nov-2006
10-Jun-2005
14-Oct-2005
24-Jul-2008
Date
Document revision history
Revision
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STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Initial release
Inserted new row in
Document status promoted from preliminary data to datasheet.
Modified
Modified
Modified value on
Document reformatted no content change
– Added I²PAK;
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–
Table 3: Thermal data
Figure 11: Capacitance variations
Figure
Figure 8
6,
Table 5.
Figure 9
Table 7.: Switching times
has been updated;
Changes
changed.