STD12NM50N STMicroelectronics, STD12NM50N Datasheet - Page 9

• Manufacturer Part Number: STD12NM50N
• Description: MOSFET N-CH 500V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.7 A to 11 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5784-2; STD12NM50N

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
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Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 17. Gate charge test circuit
Figure 19. Unclamped Inductive load test
Figure 21. Switching time waveform
circuit
Test circuit
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