STD12NM50N STMicroelectronics, STD12NM50N Datasheet - Page 4

• Manufacturer Part Number: STD12NM50N
• Description: MOSFET N-CH 500V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.7 A to 11 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5784-2; STD12NM50N

Electrical characteristics
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Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off inductive load
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
(BR)DSS
oss eq
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
R
oss
oss eq.
rss
iss
gs
gd
g
g
(1)
(1)
=25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Peak diode recovery voltage
slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
V
V
V
V
V
V
(see Figure 17)
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=0
=0, V
=400 V, I
=10 V
= V
= 10 V, I
=400 V, I
=15 V, I
=50 V, f=1 MHz,
=10 V
= max rating,
= max rating@125 °C
= ±20 V
Test conditions
Test conditions
GS
DS
, I
D
D
=0 to 400 V
D
GS
D
D
= 5.5 A
= 250 µA
= 5.5 A
=11 A,
= 11 A
= 0
Min
Min
500
2
Typ.
Typ.
0.29
940
100
130
4.5
10
30
15
44
8
6
3
oss
Max
0.38
Max
100
100
when V
1
4
DS
V/ns
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
Ω
V
V
Ω
S