IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 3
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IRF4905SPBF
Manufacturer Part Number
IRF4905SPBF
Description
MOSFET P-CH 55V 42A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF4905SPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
P
Current, Drain
-70 A
Gate Charge, Total
120 nC
Package Type
D2Pak
Polarization
P-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.020 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
20 m Ohms
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 74 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
96 ns
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Rise Time
99 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF4905SPBF
Manufacturer:
IR
Quantity:
21 000
www.irf.com
1000.0
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
1.0
0.1
10
1
0.1
3
4
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
5
1
6
-4.5V
7
V DS = -25V
≤ 60µs PULSE WIDTH
8
10
≤ 60µs PULSE WIDTH
Tj = 25°C
9
T J = 25°C
10 11 12 13 14
TOP
BOTTOM
T J = 150°C
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1000
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
100
40
30
20
10
10
0
1
0.1
0
-V DS , Drain-to-Source Voltage (V)
-I D, Drain-to-Source Current (A)
Vs. Drain Current
20
1
-4.5V
V DS = -10V
380µs PULSE WIDTH
40
10
≤ 60µs PULSE WIDTH
Tj = 150°C
TOP
BOTTOM
T J = 150°C
T J = 25°C
100
60
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
3
1000
80