IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF4905SPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4905SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -70 A
• Gate Charge, Total: 120 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 0.020 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 96 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 99 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000.0
7000
6000
5000
4000
3000
2000
1000
100.0
10.0
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 150°C
-V SD , Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Coss
Ciss
Crss
T J = 25°C
0.8
f = 1 MHZ
10
1.2
V GS = 0V
1.6
2.0
100
1000
100
Fig 8. Maximum Safe Operating Area
20
16
12
10
1
8
4
0
Fig 6. Typical Gate Charge Vs.
0
0
I D = -42A
Tc = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
-V DS , Drain-toSource Voltage (V)
LIMITED BY PACKAGE
40
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = -44V
VDS= -28V
VDS= -11V
1
80
1msec
120
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10
10msec
100µsec
DC
160
100
200