IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 5
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IRF4905SPBF
Manufacturer Part Number
IRF4905SPBF
Description
MOSFET P-CH 55V 42A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF4905SPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
P
Current, Drain
-70 A
Gate Charge, Total
120 nC
Package Type
D2Pak
Polarization
P-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.020 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
20 m Ohms
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 74 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
96 ns
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Rise Time
99 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF4905SPBF
Manufacturer:
IR
Quantity:
21 000
www.irf.com
0.001
0.01
0.1
80
60
40
20
Fig 9. Maximum Drain Current Vs.
1
0
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.20
0.02
0.10
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
50
T C , Case Temperature (°C)
LIMITED BY PACKAGE
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
0.0001
150
τ
J
τ
J
τ
1
2.0
1.5
1.0
0.5
Ci= τi/Ri
τ
1
Ci τi/Ri
Fig 10. Normalized On-Resistance
-60 -40 -20
R
0.001
I D = -42A
V GS = -10V
1
R
1
τ
2
τ
R
T J , Junction Temperature (°C)
2
2
Vs. Temperature
R
2
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
τ
20
3
3
R
τ
3
3
40
τ
C
τ
Ri (°C/W)
0.01
60
0.1165
0.3734
0.2608
80 100 120 140 160
0.000068
0.002347
0.014811
τi (sec)
5
0.1