STB12NM50T4 STMicroelectronics, STB12NM50T4 Datasheet - Page 13

• Manufacturer Part Number: STB12NM50T4
• Description: MOSFET N-CH 550V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB12NM50T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 50µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5381-2; STB12NM50T4

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
DIM.
A1
A2
B2
C2
D1
E1
V2
L2
L3
G
M
A
B
C
D
E
R
L
2.49
0.03
1.14
0.45
1.23
8.95
4.88
1.27
MIN.
4.4
0.7
1.4
2.4
10
15
0º
D
TO-247 MECHANICAL DATA
2
mm.
TYP
8.5
0.4
8
PAK MECHANICAL DATA
15.85
MAX.
2.69
0.23
0.93
1.36
9.35
10.4
5.28
1.75
4.6
1.7
0.6
1.4
3.2
4º
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
MIN.
Package mechanical data
0.315
0.334
0.015
TYP.
inch
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
MAX.
1
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