STB12NM50T4 STMicroelectronics, STB12NM50T4 Datasheet - Page 17
![MOSFET N-CH 550V 12A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB12NM50T4
Manufacturer Part Number
STB12NM50T4
Description
MOSFET N-CH 550V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12NM50.pdf
(17 pages)
Specifications of STB12NM50T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5381-2
STB12NM50T4
STB12NM50T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
20 000
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
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