STB12NM50T4 STMicroelectronics, STB12NM50T4 Datasheet - Page 5

• Manufacturer Part Number: STB12NM50T4
• Description: MOSFET N-CH 550V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB12NM50T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 50µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5381-2; STB12NM50T4

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 16)
I
di/dt = 100A/µs,
V
(see Figure 16)
SD
SD
SD
DD
DD
=12A, V
=12A,
=12A,
Test conditions
=100V, Tj=25°C
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Typ.
2.23
16.5
270
340
18
3
Max
1.5
11
48
Unit
µC
µC
ns
ns
A
A
V
A
A
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