STB80PF55T4 STMicroelectronics, STB80PF55T4 Datasheet - Page 10

• Manufacturer Part Number: STB80PF55T4
• Description: MOSFET P-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80PF55T4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6559-2; STB80PF55T4

Package mechanical data
10/16
Table 8.
Dim
D1
A1
E1
V2
b2
c2
e1
J1
L1
L2
D
H
R
A
E
b
c
e
L
D
2
PAK mechanical data
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
10
15
0°
Doc ID 8177 Rev 6
Typ.
2.54
mm
0.4
10.40
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
Min.
0.05
0°
STB80PF55, STP80PF55
0.016
inch
Typ.
0.1
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max.
8°