STB80PF55T4 STMicroelectronics, STB80PF55T4 Datasheet - Page 5

• Manufacturer Part Number: STB80PF55T4
• Description: MOSFET P-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80PF55T4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6559-2; STB80PF55T4

STB80PF55, STP80PF55
Note:
Table 7.
1. Pulse width limited by Tjmax .
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 8177 Rev 6
I
I
V
SD
SD
DD
= 80 A, V
= 80 A, di/dt = 100 A/µs
Test condictions
= 25 V, T
GS
j
=150 °C
= 0
Electrical characteristics
Min.
-
-
-
Typ.
110
495
9
Max.
1.6
10
40
Unit
µC
ns
A
A
V
A
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