STB80PF55T4 STMicroelectronics, STB80PF55T4 Datasheet - Page 4

• Manufacturer Part Number: STB80PF55T4
• Description: MOSFET P-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80PF55T4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6559-2; STB80PF55T4

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
t
I
I
DS(on)
C
GS(th)
r(Voff)
C
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
g
t
oss
t
t
t
rss
iss
c
fs
gs
gd
r
f
f
g
=25°C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
Doc ID 8177 Rev 6
I
V
V
V
V
V
V
I
V
V
I
V
(see Figure 15)
D
D
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
= 40 A
= 250 mA, V
V
R
(see Figure 14)
V
R
(see Figure 14)
V
R
(see Figure 14)
= 25 A, V
DD
DD
clamp
G
G
G
= Max rating
= Max rating, T
= ±16 V
= V
= 10 V, I
> I
= 25 V, f = 1MHz,
= 0
= 10 V
=4.7 Ω, V
=4.7 Ω, V
=4.7 Ω, V
Test conditions
=25 V, I
=25 V, I
Test conditions
D(on)
Test conditions
GS
=40 V, I
, I
DD
D
x R
D
= 250 µA
D
D
= 40 A
GS
= 80 V,
DS(on)max,
=40 A,
GS
=40 A,
GS
GS
D
=80 A,
= 0
=10 V
=10 V
=10 V
C
=125 °C
STB80PF55, STP80PF55
Min.
Min.
Min.
55
-
-
-
2
-
-
-
Typ.
0.016 0.018
190
165
Typ.
5500
1130
35
80
60
40
85
Typ.
600
190
32
27
65
3
Max.
Max. Unit
Max. Unit
258
±10
-
-
-
10
1
4
Unit
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
µA
µA
µA
S
V
V
Ω