IRF7464 International Rectifier, IRF7464 Datasheet - Page 4

• Manufacturer Part Number: IRF7464
• Description: MOSFET N-CH 200V 1.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7464

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7464

IRF7464
10000
4
1000
100
10
1
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.4
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V
0.5
SD
T = 150 C
J
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
0.6
°
Coss
Crss
Ciss
0.7
f = 1 MHZ
100
0.8
T = 25 C
J
V
GS
SHORTED
0.9
°
= 0 V
1000
1.0
100
20
16
12
0.1
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
0.72A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
2
V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
4
10
BY R
6
V
V
V
DS
DS
DS
DS(on)
= 160V
= 100V
= 40V
8
FOR TEST CIRCUIT
SEE FIGURE
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100
10
10us
100us
1ms
10ms
12
13
1000
14