IRF7464 International Rectifier, IRF7464 Datasheet - Page 6
![MOSFET N-CH 200V 1.2A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7464
Manufacturer Part Number
IRF7464
Description
MOSFET N-CH 200V 1.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7464.pdf
(8 pages)
Specifications of IRF7464
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
730 mOhm @ 720mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7464
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7464TR
Manufacturer:
NS
Quantity:
6 240
Part Number:
IRF7464TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7464
I
A S
12V
Fig 14a&b. Unclamped Inductive Test circuit
6
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.70
0.60
0.50
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
0.0
Current Sampling Resistors
.3 F
I
G
V
(B R )D S S
D.U.T.
1.0
I
D
and Waveforms
V GS = 10V
and Waveform
I D , Drain Current (A)
+
-
V
DS
2.0
V
R G
GS
20V
V D S
t p
V
G
3.0
Q
I A S
GS
D .U .T
0.01
L
Charge
Q
Q
GD
G
4.0
1 5 V
DRIVE R
5.0
+
-
V D D
A
Fig 13. On-Resistance Vs. Gate Voltage
0.70
0.60
0.50
200
160
120
80
40
0
Fig 14c. Maximum Avalanche Energy
25
7
Starting T , Junction Temperature ( C)
8
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
9
J
10
75
11
I D = 0.72A
100
12
www.irf.com
TOP
BOTTOM
13
125
14
°
0.5A
0.8A
1.2A
I D
15
150