IRF7464 International Rectifier, IRF7464 Datasheet - Page 5
![MOSFET N-CH 200V 1.2A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7464
Manufacturer Part Number
IRF7464
Description
MOSFET N-CH 200V 1.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7464.pdf
(8 pages)
Specifications of IRF7464
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
730 mOhm @ 720mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7464
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7464TR
Manufacturer:
NS
Quantity:
6 240
Part Number:
IRF7464TRPBF
Manufacturer:
IR
Quantity:
20 000
Fig 6. On-Resistance Vs. Drain Current
www.irf.com
100
1.6
1.2
0.8
0.4
0.0
0.1
10
0.00001
1
25
D = 0.50
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
R
d(on)
Pulse Width
Duty Factor
G
1. Duty factor D = t / t
2. Peak T = P
10V
V
Notes:
GS
t
r
V
DS
1
J
µs
DM
x Z
1
D.U.T.
thJA
t
P
2
IRF7464
d(off)
DM
R
+ T
10
D
A
t
t
1
f
t
2
+
-
V
DD
100
5